Negative capacitance field-effect transistors (NCFETs) represent a transformative approach in the design of low-power electronic devices. By integrating ferroelectric materials into the gate structure ...

(Nanowerk News) As our electronics continue to proliferate and become more sophisticated, the race continues for more power efficient and scaleable semiconductor devices — components that use minimal ...

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...

A new technical paper titled “Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review” by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen ...

As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...

Recent advances in semiconductor technology have pushed the concept of transistors with switching speeds greater than one terahertz, or one trillion cycles per second, closer to reality. Transistors ...

This year, several companies are expected to bring 600/650 V Gallium Nitride (GaN) power transistors to market. Almost all will be normally-on (depletion mode) transistors connected in a cascode ...

Conventional electronics based on silicon are approaching their limits in terms of performance and scalability. In recent years, engineers have thus been trying to introduce alternative designs that ...