The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...

Research groups in Japan and the U.S. jointly developed a double-layered nanowire, consisting of a germanium core and a silicon shell, which is a promising material for high-speed transistor channels.

A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...

Substituting the values from Table 1 into Equation 3 and 4, values for η and R S are obtained for this 'thermal diode' treated as a 2-terminal diode and listed in Table 2. Figure 2 is a plot of two ...

The following automatic battery-charger design is created with a circuit that could qualify as the simplest window comparator ever built around a single transistor (see the figure). It starts charging ...

Tiny electronic devices, called microelectronics, may one day be printed as easily as words on a page, thanks to new research from scientists at the U.S. Department of Energy's (DOE) Argonne National ...

New vertical device architecture promises stable, ultra-dense semiconductor stacking for future AI and high-performance ...

We’ve previously remarked upon a generation lucky enough to be well-versed in microcontrollers and computersised electronics through being brought up on the Arduino or the Raspberry Pi but unlucky ...

A graphene-based spin field-effect transistor has been used in an operating at room temperature. Using the spin of the electrons in graphene and other layered material heterostructures the researchers ...

SANTA CLARA, Calif. — In a move to address the power concerns of future microprocessors, Intel Corp. here today announced a new transistor structure that marks the company's initial use of high-k ...